NP2060G N沟道场效应MOS管 20A/60V 内阻3.9毫欧 TO-252
价格： 电议 元卖家: 陈想
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供货商：深圳市芯庆电子有限公司电 话：
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地 址：地址：深圳市福田区华强北街道华航社区深南中路3006号佳和华强大厦B座7层02
以上为NP2060G N沟道场效应MOS管 20A/60V 内阻3.9毫欧 TO-252详细参数信息，NP2060G N沟道场效应MOS管 20A/60V 内阻3.9毫欧 TO-252图片由深圳市芯庆电子有限公司提供，NP2060G N沟道场效应MOS管 20A/60V 内阻3.9毫欧 TO-252
- 产品特性
Description
The NP2060G uses advanced trench technology
to provide excellent R DS(ON) and low gate charge.It can
be used in a wide variety of applications.
General Features
V DS =20V，I D =60A
R DS(ON) (Typ.)= 2.9mΩ @V GS =4.5V
R DS(ON) (Typ.)= 3.5mΩ @V GS =2.5V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high E AS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Application
Automotive applications
Hard switched and high frequency circuits
Uninterruptible power supply
Package
TO-252-2L
The NP2060G uses advanced trench technology
to provide excellent R DS(ON) and low gate charge.It can
be used in a wide variety of applications.
General Features
V DS =20V，I D =60A
R DS(ON) (Typ.)= 2.9mΩ @V GS =4.5V
R DS(ON) (Typ.)= 3.5mΩ @V GS =2.5V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high E AS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Application
Automotive applications
Hard switched and high frequency circuits
Uninterruptible power supply
Package
TO-252-2L
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