NP2018DR 16A/20V 场效应MOS管N沟道 DFN封装
价格： 电议 元卖家: 陈想
咨询： 
供货商：深圳市芯庆电子有限公司电 话：
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邮 箱：1161694576@qq.com
地 址：地址：深圳市福田区华强北街道华航社区深南中路3006号佳和华强大厦B座7层02
以上为NP2018DR 16A/20V 场效应MOS管N沟道 DFN封装详细参数信息，NP2018DR 16A/20V 场效应MOS管N沟道 DFN封装图片由深圳市芯庆电子有限公司提供，NP2018DR 16A/20V 场效应MOS管N沟道 DFN封装
- 产品特性
Description
The NP2018DR uses advanced trench technology
to provide excellent R DS(ON)
General Features
, low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications.
V DS =20V，I D
R
=16A
DS(ON) (Typ.)=11.5mΩ @V GS
R
=2.5V
DS(ON) (Typ.)=9mΩ @V GS
High power and current handing capability
=4.5V
Lead free product is acquired
Surface mount package
Application
PWM applications
Load switch
Package
The NP2018DR uses advanced trench technology
to provide excellent R DS(ON)
General Features
, low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications.
V DS =20V，I D
R
=16A
DS(ON) (Typ.)=11.5mΩ @V GS
R
=2.5V
DS(ON) (Typ.)=9mΩ @V GS
High power and current handing capability
=4.5V
Lead free product is acquired
Surface mount package
Application
PWM applications
Load switch
Package
DFN2*2-6L-B
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