NP55N04D6-G PDFN5*6-8L-A 40V耐压N沟道增强型场效应管MOS管原装
价格： 电议 元卖家: 林
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以上为NP55N04D6-G PDFN5*6-8L-A 40V耐压N沟道增强型场效应管MOS管原装详细参数信息，NP55N04D6-G PDFN5*6-8L-A 40V耐压N沟道增强型场效应管MOS管原装图片由深圳市晶立弘泰电子科技有限公司提供，NP55N04D6-G PDFN5*6-8L-A 40V耐压N沟道增强型场效应管MOS管原装
- 产品特性
Description
The NP55N04D6 uses Trench technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction
and switching power losses are minimized due to an
extremely low combination of RDS(ON) and Qg. This
device is ideal for high-frequency switching and
synchronous rectification.
General Features
VDS=40V，ID=55A
RDS(ON)(Typ.)=8mΩ @VGS=10V
RDS(ON)(Typ.)=11mΩ @VGS=4.5V
Very low on-resistance RDS(ON)
150℃ operating temperature
100% UIS tested
Application
Synchronous Rectification in DC/DC and AC/DC Converters
Industrial and Motor Drive applications
The NP55N04D6 uses Trench technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction
and switching power losses are minimized due to an
extremely low combination of RDS(ON) and Qg. This
device is ideal for high-frequency switching and
synchronous rectification.
General Features
VDS=40V，ID=55A
RDS(ON)(Typ.)=8mΩ @VGS=10V
RDS(ON)(Typ.)=11mΩ @VGS=4.5V
Very low on-resistance RDS(ON)
150℃ operating temperature
100% UIS tested
Application
Synchronous Rectification in DC/DC and AC/DC Converters
Industrial and Motor Drive applications
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