NP40N04QR-G DFN3X3-8L 40V耐压N沟道增强型场效应管MOS管原装
价格： 电议 元卖家: 林
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以上为NP40N04QR-G DFN3X3-8L 40V耐压N沟道增强型场效应管MOS管原装详细参数信息，NP40N04QR-G DFN3X3-8L 40V耐压N沟道增强型场效应管MOS管原装图片由深圳市晶立弘泰电子科技有限公司提供，NP40N04QR-G DFN3X3-8L 40V耐压N沟道增强型场效应管MOS管原装
- 产品特性
Description
The NP40N04QR uses Trench technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an
extremely low combination of RDS(ON) and Qg. This
device is ideal for high-frequency switching and
synchronous rectification.
General Features
VDS=40V，ID=40A
RDS(ON)=6.6mΩ (typical) @VGS=10V
Excellent gate charge x RDS(ON) product(FOM)
Very low on-resistance RDS(ON)
150℃ operating temperature
Pb-free lead plating
100% UIS tested
Application
DC/DC Converter
ldeal for high-frequency switching and synchronous rectification
Package
DFN3X3-8L
The NP40N04QR uses Trench technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an
extremely low combination of RDS(ON) and Qg. This
device is ideal for high-frequency switching and
synchronous rectification.
General Features
VDS=40V，ID=40A
RDS(ON)=6.6mΩ (typical) @VGS=10V
Excellent gate charge x RDS(ON) product(FOM)
Very low on-resistance RDS(ON)
150℃ operating temperature
Pb-free lead plating
100% UIS tested
Application
DC/DC Converter
ldeal for high-frequency switching and synchronous rectification
Package
DFN3X3-8L
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