NP40N04QR-G DFN3X3-8L 40V耐压N沟道增强型场效应管MOS管原装
价格： 电议 元卖家: 陈想
咨询： 
供货商：深圳市芯庆电子有限公司电 话：
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邮 箱：1161694576@qq.com
地 址：地址：深圳市福田区华强北街道华航社区深南中路3006号佳和华强大厦B座7层02
以上为NP40N04QR-G DFN3X3-8L 40V耐压N沟道增强型场效应管MOS管原装详细参数信息，NP40N04QR-G DFN3X3-8L 40V耐压N沟道增强型场效应管MOS管原装图片由深圳市芯庆电子有限公司提供，NP40N04QR-G DFN3X3-8L 40V耐压N沟道增强型场效应管MOS管原装
- 产品特性
Description
The NP40N04QR uses Trench technology that is
uniquely optimized to provide the most efficient high
frequency switching performance . Both conduction and
switching power losses are minimized due to an
extremely low combination of RDS(ON) and Qg. This device
is ideal for high-frequency switching and synchronous
rectification.
General Features
VDS=40V，ID=40A
RDS(ON)=6.6mΩ (typical) @VGS=10V
RDS(ON)=9 mΩ (typical) @VGS=4.5V
Excellent gate charge X RDS(ON) product(FOM)
Very low on-resistance RDS(ON)
150℃ operating temperature
Pb-free lead plating
100% UIS tested
Application
DC/DC Converter
ldeal for high-frequency switching and synchronous rectification
Package
DFN3X3-8L
The NP40N04QR uses Trench technology that is
uniquely optimized to provide the most efficient high
frequency switching performance . Both conduction and
switching power losses are minimized due to an
extremely low combination of RDS(ON) and Qg. This device
is ideal for high-frequency switching and synchronous
rectification.
General Features
VDS=40V，ID=40A
RDS(ON)=6.6mΩ (typical) @VGS=10V
RDS(ON)=9 mΩ (typical) @VGS=4.5V
Excellent gate charge X RDS(ON) product(FOM)
Very low on-resistance RDS(ON)
150℃ operating temperature
Pb-free lead plating
100% UIS tested
Application
DC/DC Converter
ldeal for high-frequency switching and synchronous rectification
Package
DFN3X3-8L
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