NP35N04QR-G PDFN3x3-8L 40V耐压N沟道增强型场效应管MOS管原装
价格： 电议 元卖家: 陈想
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供货商：深圳市芯庆电子有限公司电 话：
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地 址：地址：深圳市福田区华强北街道华航社区深南中路3006号佳和华强大厦B座7层02
以上为NP35N04QR-G PDFN3x3-8L 40V耐压N沟道增强型场效应管MOS管原装详细参数信息，NP35N04QR-G PDFN3x3-8L 40V耐压N沟道增强型场效应管MOS管原装图片由深圳市芯庆电子有限公司提供，NP35N04QR-G PDFN3x3-8L 40V耐压N沟道增强型场效应管MOS管原装
- 产品特性
Description
The NP35N04QR uses Trench technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an
extremely low combination of RDS(ON) and Qg. This
device is ideal for high-frequency switching and
synchronous rectification.
General Features
VDS=40V，ID=35A
RDS(ON)=7.9mΩ (typical) @VGS=10V
RDS(ON)=10.2mΩ (typical) @VGS=4.5V
Excellent gate charge x RDS(ON) product(FOM)
Very low on-resistance RDS(ON)
150℃ operating temperature
Pb-free lead plating
100% UIS tested
Application
DC/DC Converter
ldeal for high-frequency switching and synchronous rectification
Package
PDFN3X3-8L
The NP35N04QR uses Trench technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an
extremely low combination of RDS(ON) and Qg. This
device is ideal for high-frequency switching and
synchronous rectification.
General Features
VDS=40V，ID=35A
RDS(ON)=7.9mΩ (typical) @VGS=10V
RDS(ON)=10.2mΩ (typical) @VGS=4.5V
Excellent gate charge x RDS(ON) product(FOM)
Very low on-resistance RDS(ON)
150℃ operating temperature
Pb-free lead plating
100% UIS tested
Application
DC/DC Converter
ldeal for high-frequency switching and synchronous rectification
Package
PDFN3X3-8L
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