以上为AP15N06 NMOS SOT89-3L 电池保护MOS管 低内阻MOS详细参数信息,AP15N06 NMOS SOT89-3L 电池保护MOS管 低内阻MOS图片由深圳市世微半导体有限公司提供,AP15N06 NMOS SOT89-3L 电池保护MOS管 低内阻MOS
- 产品特性
Super Low Gate Charge
Green Device Available
Excellent Cdv/dt effect decline
Advanced high cell density Trench
technology
Description
The 15N06is the highestperformance trench N-
ch MOSFETs with extreme high cell density,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The meet the RoHS and Green Product
requirement, 100% EAS guaranteed with full
function reliability approved.
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